Methods of forming smooth conductive layers for integrated circuit devices
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United States of America Patent
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-
Sep 4, 2001
Grant Date -
N/A
app pub date -
Aug 19, 1998
filing date -
Aug 19, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming a metal layer for an integrated circuit device includes forming a first conductive layer on an integrated circuit substrate. While forming the first conductive layer, a reflection index of the first conductive layer is monitored, and the formation of the first conductive layer is terminated when the reflection index of the first conductive layer reaches a predetermined value. More particularly, the first conductive layer can be an aluminum layer having a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.
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