Copper metallurgy in integrated circuits

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United States of America Patent

PATENT NO 6284656
SERIAL NO

09128859

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Abstract

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A typical integrated circuit interconnects millions of microscopic transistors and resistors with aluminum wires buried in silicon-dioxide insulation. Yet, aluminum wires and silicon-dioxide insulation are less attractive than copper wires and polymer-based insulation, which promise both lower electrical resistance and capacitance and thus faster, more efficient circuits. Unfortunately, current techniques cannot realize the promise because copper reacts with the polymer-based insulation to form copper dioxide within the polymer, reducing effectiveness of the copper-polymer combination. Accordingly, the inventor devised a method which uses a non-acid-precursor to form a polymeric layer and then cures, or bakes, it in a non-oxidizing atmosphere, thereby making the layer resistant to copper-dioxidizing reactions. Afterward, the method applies a copper-adhesion material, such as zirconium, to the layer to promote adhesion with a subsequent copper layer. With reduced copper-dioxide, the resulting interconnective structure facilitates integrated circuits with better speed and efficiency.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPHWA-YA TECHNOLOGY PARK 669 FUHSING 3 RD KUEISHAN TAO-YUAN HSIEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Farrar, Paul A So. Burlington, VT 236 4342

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