Non-metallic barrier formation for copper damascene type interconnects
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United States of America Patent
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Sep 4, 2001
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app pub date -
Feb 25, 2000
filing date -
Feb 25, 2000
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Abstract
A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.
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