Importance

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Abstract

A nonvolatile static random access memory adapted for a semiconductor substrate mainly comprises a nonvolatile erasable programmable memory transistor having a charge storage layer for storing data charges, and further having a first gate terminal, a first source terminal, and a first drain terminal, wherein the first gate terminal is connected to a word line, the first source terminal is connected to a power supply circuit through a first loader, and the first drain is connected to a first bit line; an access transistor having a second gate terminal, a second source terminal, and a second drain terminal, wherein the second gate terminal is connected to the word line, the second source terminal is connected to the power supply circuit through a second loader, and the second drain is connected to a second bit line; a first drive transistor having a third gate terminal, a third source terminal, and a third drain terminal, wherein the third gate terminal is connected to the second source terminal, the third source terminal is connected to ground, and the third drain terminal is connected to the first source terminal; a second drive transistor having a fourth gate terminal, a fourth source terminal, and a fourth drain terminal, wherein the fourth gate terminal is connected to the first source terminal, the fourth source terminal is connected to ground, and the fourth drain terminal is connected to the second source terminal; and a read control transistor having a fifth gate terminal, a fifth source terminal, and a fifth drain terminal, wherein the fifth gate terminal is connected to a control line, the fifth source terminal is connected to ground, and the fifth drain terminal is connected to the first bit line.

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First Claim