Importance

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Abstract

A method of manufacturing a semiconductor device having a polycrystalline semiconductor layer includes the steps of: preparing a base substrate; forming a first semiconductor layer on a surface of the base substrate; forming a first polycrystalline semiconductor layer by applying an energy beam to the first semiconductor layer; etching a surface layer of the first polycrystalline semiconductor layer; and after the etching process, forming a second semiconductor layer on a surface of the first polycrystalline semiconductor layer without exposing the surface of the first polycrystalline semiconductor layer to an atmospheric air. The final polycrystalline semiconductor layer has a high film quality.

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First Claim