Sputtering film forming method, sputtering film forming equipment, and semiconductor device manufacturing method
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United States of America Patent
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Sep 11, 2001
Grant Date -
N/A
app pub date -
Feb 5, 1999
filing date -
Jun 2, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There is provided an RF sputtering film forming method of forming a compound film having a stable composition by use of stable plasma with a broad process window to thus facilitate composition control of the compound film. In the RF sputtering film forming method, an alternating voltage or alternating current is applied to a part or all of walls positioned on the outside of a space formed between a wafer and a target, or an electron temperature in the plasma is reduced by oscillating the RF power in a pulse fashion, or a sputtering gas is composed of at least one kind of gases of helium, neon, xenon, and krypton, or a minus voltage is applied to a part or all of the walls positioned on the outside of the space formed between the wafer and the target.
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