Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor
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United States of America Patent
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Sep 11, 2001
Issued Date -
N/A
app pub date -
Oct 19, 1998
filing date -
Jul 4, 1992
priority date (Note) -
Expired
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Abstract
A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.
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