Spin-rinse-drying process for electroplated semiconductor wafers
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United States of America Patent
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Sep 18, 2001
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N/A
app pub date -
Nov 30, 1998
filing date -
Nov 30, 1998
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Abstract
The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.
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