Method of modeling IC substrate noises utilizing improved doping profile access
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United States of America Patent
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Sep 18, 2001
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app pub date -
Mar 27, 2000
filing date -
Mar 4, 1999
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Abstract
A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
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