Multistack 3-dimensional high density semiconductor device and method for fabrication
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United States of America Patent
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Sep 18, 2001
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N/A
app pub date -
Jan 3, 2000
filing date -
Jan 3, 2000
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Abstract
A multistack 3-D semiconductor structure comprising a first level structure comprising a first semiconductor substrate and first active devices; and a second level structure comprising a SOI semiconductor structure bonded to the first level structure and further comprising second active devices; and wherein the first active devices are more heat tolerant than the second active devices is provided along with a method for its fabrication.
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