Method for the in-writing verification of the threshold value in non-volatile memories
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United States of America Patent
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Sep 18, 2001
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N/A
app pub date -
May 11, 2000
filing date -
May 11, 1999
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Abstract
A method for the in-writing verification of the threshold value of the multilevel cells suitable to memorize n bits each, that provides for the utilization of a sense amplifier containing a respective successive approximation register. An output signal of a comparison circuit provides for the loading of the datum to be programmed in the cell being selected, after which a programming pulse is applied and the comparison between the reference current corresponding to said datum and the current that flows in the cell is carried out. The application of the programming pulse and the performance of the comparison are then repeated until it is verified that the current of the cell is smaller than the reference current.
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