Method of annealing large area glass substrates
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United States of America Patent
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Sep 25, 2001
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app pub date -
Mar 3, 1998
filing date -
Mar 3, 1998
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Abstract
A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
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