Semiconductor device and method for fabricating the same
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United States of America Patent
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-
Oct 2, 2001
Grant Date -
N/A
app pub date -
Jan 28, 1999
filing date -
Jun 1, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.
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