Cell block structure of nonvolatile ferroelectric memory
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 2, 2001
Grant Date -
N/A
app pub date -
Aug 29, 2000
filing date -
Sep 7, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Cell block structure of a nonvolatile ferroelectric memory is provided that can reduce loading on a bitline and simplify sense amplifier block arrangement and design. The nonvolatile ferroelectric memory can include a cell array block having split wordlines controlled by a wordline driver and a cell block selection switching unit that separates the cell array block into a first region and a second region. Each switch in the cell block selection switching unit is selectively coupled to a bitline for the first region and a bitline for the second region. First and second sense amplifier arrays sense a data from a cell array either in the first region or the second region selected by the cell block selection switching unit.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully