GaInAsP/AIGaInP laser diodes with AIGaAs type II carrier blocking layer in the waveguide
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United States of America Patent
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Oct 2, 2001
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N/A
app pub date -
Feb 16, 1999
filing date -
Feb 16, 1999
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Abstract
A GaInAsP/AR GaInP laser diode is provided with an AlGaAs type II carrier blocking layer in the waveguide of the diode. The resulting diode exhibits a relatively low threshold current, an increased slope efficiency and characteristic T0 and T1, for the diodes are less limited by carrier leakage.
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