Semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure
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United States of America Patent
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Oct 9, 2001
Grant Date -
N/A
app pub date -
Oct 5, 1998
filing date -
Oct 5, 1998
priority date (Note) -
Expired
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Abstract
A semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure. Consistent with one embodiment of the invention, the semiconductor structure comprises a substrate having a first surface, on which a circuit interconnect layer is formed, and a second surface. A protective layer is formed on the second surface of the substrate, wherein the protective layer is non-reactive with gas used to etch the substrate. An electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate.
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