Semiconductor device with self-aligned contact and manufacturing method thereof
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United States of America Patent
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Oct 9, 2001
Grant Date -
N/A
app pub date -
Oct 27, 1998
filing date -
Oct 28, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention simplifies a manufacturing process by performing contact hole formation in a single step even in manufacturing a device having a self alignment contact. A cap layer having a contact portion is formed in a self alignment manner on a gate electrode formed on a silicon substrate. After a SiO.sub.2 interlayer film is deposited on the cap layer and the silicon substrate, the patterning of a contact hole is performed. Thereafter, a wiring layer is formed in the contact hole. The diameter of the contact portion is formed differently from the diameter of the contact hole.
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