Method for introducing an equivalent RC circuit in a MOS device using resistive wells
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United States of America Patent
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Oct 16, 2001
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N/A
app pub date -
Oct 19, 2000
filing date -
Oct 19, 2000
priority date (Note) -
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Abstract
A method for providing low power MOS devices that include buried wells specifically designed to provide a resistive path between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between clock cycles.
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