Method of manufacturing semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Oct 16, 2001
Grant Date -
N/A
app pub date -
Jan 8, 2001
filing date -
Jun 30, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A polycrystalline or amorphous silicon film is formed on the surface of a semiconductor substrate through a gate insulator film. The surface of the silicon film is so exposed to the outside air that a native oxide film is formed thereon. A barrier film consisting of a metal nitride containing added reducing metal atoms reducing the native oxide film is formed on the silicon film through the native oxide film. A metal film is formed on the barrier film, while another barrier film and an insulator film are successively deposited on the metal film. When heat treating a gate electrode deposited in the aforementioned manner, the native oxide film is reduced by the reducing metal atoms to disappear, while nitrogen atoms resulting from the metal nitride thermally decomposed in the barrier film react with the reducing metal atoms to form a barrier metal. Thus provided are a method of manufacturing a semiconductor device and a semiconductor device capable of preventing a polymetal gate electrode from increase of sheet resistance and refining the gate electrode also when performing heat treatment thereon.
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