Method of manufacturing dummy pattern
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Oct 16, 2001
Grant Date -
N/A
app pub date -
Jan 12, 2000
filing date -
Jan 12, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating a dummy pattern is proposed. A semiconductor substrate is divided into a dense region and a sparse region. Conducting patterns are formed on the dense region. A dielectric layer is formed over the substrate and the conducting patterns. Photoresist patterns are formed on the dielectric layer above the sparse region. The dielectric layer is etched back to form a plurality of spacers on the sidewall of the conducting patterns, and simultaneously, a plurality of dummy patterns are formed on the sparse region.
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