Silicon oxynitride film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 16, 2001
Grant Date -
N/A
app pub date -
Dec 15, 1998
filing date -
Dec 15, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An oxynitride film on the surface of a silicon or silicon germanium substrate is described where film is substantially an oxide film at the film oxide interface, and the nitrogen content of the film increases with the distance away from the substrate. The film is made by a process of rapidly processing a clean silicon wafer in an atmosphere of a nitrogen containing gas containing a very small percentage of oxygen containing gas.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully