Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
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United States of America Patent
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Oct 16, 2001
Issued Date -
N/A
app pub date -
May 9, 2000
filing date -
Oct 21, 1997
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Abstract
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
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