Selective etching of thin films
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Oct 23, 2001
Grant Date -
N/A
app pub date -
Feb 4, 2000
filing date -
Feb 4, 2000
priority date (Note) -
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Abstract
The invention removes a portion(s) of a material of interest, while leaving an adjacent or underlying electrode(s) intact. The material is exposed to a plasma containing at least two-halogen-containing gases. At least a portion of the material, for example a piezoelectric material, an oxygen-containing material, or a nitrogen-containing material, is etched by the plasma. By removing desired portions of this material, the device can have alternative or complex architecture. In addition, the propagation of shear waves is limited in the device.
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