Method for forming a gate electrode on a semiconductor substrate
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United States of America Patent
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Oct 23, 2001
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N/A
app pub date -
Mar 6, 2001
filing date -
Nov 17, 2000
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Abstract
A method for forming a gate electrode on a semiconductor substrate that includes forming a gate insulating layer on a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, forming a tungsten silicide layer on the polysilicon layer, forming a diffusion barrier layer on the tungsten silicide layer, forming a tungsten layer on the diffusion barrier layer, crystallizing the diffusion barrier layer, forming a first insulating layer on the tungsten layer, forming a gate electrode, forming an oxide layer, and forming a second insulating layer.
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