Method for forming a gate electrode on a semiconductor substrate

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United States of America Patent

PATENT NO 6306743
SERIAL NO

09798942

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Abstract

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A method for forming a gate electrode on a semiconductor substrate that includes forming a gate insulating layer on a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, forming a tungsten silicide layer on the polysilicon layer, forming a diffusion barrier layer on the tungsten silicide layer, forming a tungsten layer on the diffusion barrier layer, crystallizing the diffusion barrier layer, forming a first insulating layer on the tungsten layer, forming a gate electrode, forming an oxide layer, and forming a second insulating layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.OTTAWA ONTARIO, CA1363

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Byung Hak Chungchongbuk-do, KR 15 154

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