Endpoint monitoring with polishing rate change
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United States of America Patent
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Oct 30, 2001
Grant Date -
N/A
app pub date -
Feb 1, 2000
filing date -
Feb 1, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.
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