Nonvolatile semiconductor memory device having extracting electrode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 30, 2001
Grant Date -
N/A
app pub date -
Dec 21, 1998
filing date -
Dec 25, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
This invention is a nonvolatile semiconductor memory device including an electrically rewritable memory cell having a gate, source, drain, and charge storage layer, an extracting electrode electrically connected to at least one of the source and drain of the memory cell, and a counter electrode essentially capacitively coupled with the extracting electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully