Plasma etching of polysilicon using fluorinated gas mixtures
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United States of America Patent
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Nov 6, 2001
Grant Date -
N/A
app pub date -
Dec 3, 1998
filing date -
Dec 3, 1998
priority date (Note) -
Expired
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Abstract
A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 .ANG./min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF.sub.6, 1-40 sccm of CHF.sub.3, and 40-50 sccm of O.sub.2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.
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