Programmable resistance memory arrays with reference cells
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United States of America Patent
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Nov 6, 2001
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N/A
app pub date -
Dec 16, 1999
filing date -
Dec 16, 1999
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Abstract
A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal developed by the memory cell with a reference signal developed by one or more of the reference cells. The programmable resistance elements may comprise a phase-change material.
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