US Patent No: 6,314,014

Number of patents in Portfolio can not be more than 2000

Programmable resistance memory arrays with reference cells

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Abstract

A memory system comprising memory cells and reference cells each including a programmable resistance element. The resistance state of a memory cell is determined by comparing a sense signal developed by the memory cell with a reference signal developed by one or more of the reference cells. The programmable resistance elements may comprise a phase-change material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
OVONYX, INC.BOISE, ID282

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lowrey, Tyler - 200 3566
Wicker, Guy C Southfield, MI 46 4186

Cited Art

Patent Info (Count) # Cites Year
 
OVONYX, INC. (8)
5,166,758 Electrically erasable phase change memory 536 1991
5,296,716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 436 1991
5,414,271 Electrically erasable memory elements having improved set resistance stability 245 1991
5,359,205 Electrically erasable memory elements characterized by reduced current and improved thermal stability 261 1992
5,341,328 Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life 277 1992
5,536,947 Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom 295 1995
5,534,712 Electrically erasable memory elements characterized by reduced current and improved thermal stability 420 1995
5,825,046 Composite memory material comprising a mixture of phase-change memory material and dielectric material 298 1996
 
CALLAHAN CELLULAR L.L.C. (1)
5,936,880 Bi-layer programmable resistor memory 14 1997
 
ENERGY CONVERSION DEVICES, INC. (1)
5,687,112 Multibit single cell memory element having tapered contact 454 1996
 
FUJITSU LIMITED (1)
6,084,795 Ferroelectric memory device 6 1999
 
INTERSIL CORPORATION (1)
4,272,833 Two switchable resistive element per cell memory array 9 1979
 
MICRON TECHNOLOGY, INC. (1)
5,787,042 Method and apparatus for reading out a programmable resistor memory 15 1997
 
ROUND ROCK RESEARCH, LLC (1)
5,883,827 Method and apparatus for reading/writing data in a memory system including programmable resistors 57 1996
 
SHARP KABUSHIKI KAISHA (1)
5,737,260 Dual mode ferroelectric memory reference scheme 44 1996
 
SYMETRIX CORPORATION (1)
6,080,592 Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications 9 1995
 
TECHSEARCH, LLC (1)
4,720,758 Load dependent current limiter for the power supply of a multi-module electronic system 15 1987

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (181)
6,579,760 Self-aligned, programmable phase change memory 239 2002
6,750,101 Method of manufacturing self-aligned, programmable phase change memory 94 2002
6,830,952 Spacer chalcogenide memory method and device 103 2003
7,385,235 Spacer chalcogenide memory device 80 2004
7,220,983 Self-aligned small contact phase-change memory method and device 155 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 2 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 94 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 86 2005
7,608,503 Side wall active pin memory and manufacturing method 6 2005
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 41 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 95 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 1 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
7,471,555 Thermally insulated phase change memory device 4 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 0 2006
7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 1 2006
7,397,060 Pipe shaped phase change memory 81 2006
7,554,144 Memory device and manufacturing method 5 2006
7,928,421 Phase change memory cell with vacuum spacer 1 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 4 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 54 2006
7,449,710 Vacuum jacket for phase change memory element 77 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 4 2006
8,129,706 Structures and methods of a bistable resistive random access memory 0 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 29 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 2 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 0 2006
7,423,300 Single-mask phase change memory element 81 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 0 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 0 2006
7,459,717 Phase change memory cell and manufacturing method 9 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
8,237,140 Self-aligned, embedded phase change RAM 0 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2006
7,560,337 Programmable resistive RAM and manufacturing method 19 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 1 2006
7,785,920 Method for making a pillar-type phase change memory element 1 2006
7,741,636 Programmable resistive RAM and manufacturing method 1 2006
7,450,411 Phase change memory device and manufacturing method 2 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 5 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 8 2006
7,504,653 Memory cell device with circumferentially-extending memory element 15 2006
7,510,929 Method for making memory cell device 1 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 1 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2006
8,067,762 Resistance random access memory structure for enhanced retention 0 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 0 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 13 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 24 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 0 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 33 2006
7,718,989 Resistor random access memory cell device 2 2006
7,786,460 Phase change memory device and manufacturing method 23 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 7 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 7 2007
7,483,292 Memory cell with separate read and program paths 2 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 2 2007
7,534,647 Damascene phase change RAM and manufacturing method 1 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 0 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 4 2007
7,755,076 self align side wall active phase change memory 7 2007
7,569,844 Memory cell sidewall contacting side electrode 21 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 43 2007
7,463,512 Memory element with reduced-current phase change element 5 2007
7,701,759 Memory cell device and programming methods 8 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 3 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 10 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 3 2007
7,663,135 Memory cell having a side electrode contact 4 2007
7,551,473 Programmable resistive memory with diode structure 12 2007
7,535,756 Method to tighten set distribution for PCRAM 8 2007
7,919,766 Method for making self aligning pillar memory cell device 1 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 0 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 1 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 9 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 1 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 3 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 2 2008
7,879,645 Fill-in etching free pore device 7 2008
7,619,311 Memory cell device with coplanar electrode surface and method 8 2008
8,158,965 Heating center PCRAM structure and methods for making 0 2008
7,932,101 Thermally contained/insulated phase change memory device and method 1 2008
8,084,842 Thermally stabilized electrode structure 1 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 4 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 7 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 22 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 0 2008
7,642,123 Thermally insulated phase change memory manufacturing method 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 0 2008
7,777,215 Resistive memory structure with buffer layer 7 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 1 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 3 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
7,719,913 Sensing circuit for PCRAM applications 1 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 0 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 0 2008
8,036,014 Phase change memory program method without over-reset 2 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 0 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 2 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 0 2008
7,869,270 Set algorithm for phase change memory cell 2 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 1 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 1 2009
8,107,283 Method for setting PCRAM devices 2 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 0 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 0 2009
8,077,505 Bipolar switching of phase change device 0 2009
8,097,871 Low operational current phase change memory structures 0 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 3 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 1 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 0 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 0 2009
8,110,822 Thermal protect PCRAM structure and methods for making 1 2009
7,894,254 Refresh circuitry for phase change memory 2 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 1 2009
8,198,619 Phase change memory cell structure 0 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 1 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 0 2009
7,972,895 Memory cell device with coplanar electrode surface and method 1 2009
7,993,962 I-shaped phase change memory cell 0 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 0 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 0 2009
7,929,340 Phase change memory cell and manufacturing method 0 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 0 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 0 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 0 2010
7,920,415 Memory cell device and programming methods 0 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 0 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 0 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 0 2010
8,178,405 Resistor random access memory cell device 0 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 0 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 0 2010
8,178,388 Programmable resistive RAM and manufacturing method 1 2010
8,237,148 self align side wall active phase change memory 0 2010
8,310,864 Self-aligned bit line under word line memory array 0 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 0 2010
7,943,920 Resistive memory structure with buffer layer 0 2010
8,008,114 Phase change memory device and manufacturing method 0 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 0 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 1 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 0 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 1 2010
8,110,430 Vacuum jacket for phase change memory element 0 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 0 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 0 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 0 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
8,293,600 Thermally stabilized electrode structure 0 2011
 
HITACHI, LTD. (12)
6,563,743 Semiconductor device having dummy cells and semiconductor device having dummy cells for redundancy 29 2001
7,116,593 Storage device 23 2002
6,680,867 Semiconductor device 4 2003
6,862,232 Semiconductor device 8 2003
7,054,214 Semiconductor device 6 2004
7,286,430 Semiconductor device 5 2006
7,324,372 Storage device 4 2006
7,379,328 Semiconductor device 79 2007
7,542,347 Semiconductor device 3 2007
7,719,870 Storage device 1 2007
7,804,717 Semiconductor device 1 2009
7,978,524 Semiconductor device 0 2010
 
MICRON TECHNOLOGY, INC. (11)
6,791,859 Complementary bit PCRAM sense amplifier and method of operation 38 2001
6,909,656 PCRAM rewrite prevention 10 2002
6,791,885 Programmable conductor random access memory and method for sensing same 10 2002
6,939,744 Use of palladium in IC manufacturing with conductive polymer bump 2 2003
6,882,578 PCRAM rewrite prevention 4 2003
7,002,833 Complementary bit resistance memory sensor and method of operation 30 2004
6,954,385 Method and apparatus for sensing resistive memory state 15 2004
7,224,632 Rewrite prevention in a variable resistance memory 4 2005
7,242,603 Method of operating a complementary bit resistance memory sensor 7 2005
7,366,003 Method of operating a complementary bit resistance memory sensor and method of operation 0 2006
7,869,249 Complementary bit PCRAM sense amplifier and method of operation 0 2008
 
NANOCHIP, INC. (9)
6,985,377 Phase change media for high density data storage 10 2003
7,379,412 Methods for writing and reading highly resolved domains for high density data storage 1 2004
7,301,887 Methods for erasing bit cells in a high density data storage device 2 2004
7,463,573 Patterned media for a high density data storage device 5 2005
7,367,119 Method for forming a reinforced tip for a probe storage device 2 2005
7,309,630 Method for forming patterned media for a high density data storage device 78 2005
7,336,524 Atomic probes and media for high density data storage 2 2005
7,391,707 Devices and methods of detecting movement between media and probe tip in a probe data storage system 1 2007
7,414,953 Memory having a layer with electrical conductivity anisotropy 3 2007
 
SAMSUNG ELECTRONICS CO., LTD. (9)
7,242,605 Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance range 10 2004
7,295,463 Phase-changeable memory device and method of manufacturing the same 7 2005
7,885,098 Non-volatile phase-change memory device and method of reading the same 0 2005
7,397,681 Nonvolatile memory devices having enhanced bit line and/or word line driving capability 6 2006
7,700,430 Phase-changeable memory device and method of manufacturing the same 3 2007
7,688,621 Memory system, memory device and apparatus including writing driver circuit for a variable resistive memory 5 2007
7,830,705 Multi-level phase change memory device and related methods 3 2008
8,144,535 Test circuit for measuring resistance distribution of memory cells and semiconductor system including the same 0 2009
8,116,117 Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device 0 2009
 
OVONYX, INC. (8)
6,570,784 Programming a phase-change material memory 197 2001
6,781,860 High voltage row and column driver for programmable resistance memory 5 2002
6,912,146 Using an MOS select gate for a phase change memory 10 2002
7,525,117 Chalcogenide devices and materials having reduced germanium or telluruim content 0 2005
7,767,992 Multi-layer chalcogenide devices 0 2006
7,339,815 Method of operating a programmable resistance memory array 3 2006
7,935,951 Composite chalcogenide materials and devices 0 2007
7,978,506 Thin film logic device and system 1 2008
 
QIMONDA AG (8)
7,057,201 Integrated semiconductor memory 1 2004
7,515,461 Current compliant sensing architecture for multilevel phase change memory 48 2007
7,499,349 Memory with resistance memory cell and evaluation circuit 1 2007
7,626,860 Optimized phase change write method 1 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 0 2007
7,791,933 Optimized phase change write method 0 2007
8,030,634 Memory array with diode driver and method for fabricating the same 1 2008
7,825,398 Memory cell having improved mechanical stability 0 2008
 
SANDISK TECHNOLOGIES INC. (7)
6,538,922 Writable tracking cells 73 2000
6,714,449 Sense amplifier suitable for analogue voltage levels 34 2003
7,237,074 Tracking cells for a memory system 82 2003
6,873,549 Writable tracking cells 10 2003
7,301,807 Writable tracking cells 52 2005
7,916,552 Tracking cells for a memory system 0 2010
8,072,817 Tracking cells for a memory system 0 2011
 
MITSUBISHI KAGAKU MEDIA CO., LTD. (4)
7,166,415 Phase-change recording material used for information recording medium and information recording medium employing it 5 2003
7,105,217 Phase-change recording material and information recording medium 6 2005
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MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (3)
7,232,703 Non-volatile memory and the fabrication method 4 2004
7,106,618 Method of driving a non-volatile memory 16 2004
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HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (2)
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7,019,381 Method of providing multiple logical bits per memory cell 0 2003
 
INTEL CORPORATION (2)
6,590,807 Method for reading a structural phase-change memory 181 2001
6,832,177 Method of addressing individual memory devices on a memory module 19 2002
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (2)
7,009,694 Indirect switching and sensing of phase change memory cells 10 2004
8,250,010 Electronic learning synapse with spike-timing dependent plasticity using unipolar memory-switching elements 0 2009
 
MARVELL INTERNATIONAL LTD. (2)
7,839,672 Phase change memory array circuits and methods of manufacture 0 2007
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NXP B.V. (2)
7,307,267 Electric device with phase change material and parallel heater 4 2003
8,335,103 Integrated circuit with memory cells comprising a programmable resistor and method for addressing memory cells comprising a programmable resistor 0 2005
 
SANDISK 3D LLC (2)
7,869,258 Reverse set with current limit for non-volatile storage 7 2008
8,098,511 Reverse set with current limit for non-volatile storage 1 2010
 
STMICROELECTRONICS S.A. (2)
7,057,941 Three-state memory cell 1 2003
7,453,717 Three-state memory cell 0 2006
 
STMICROELECTRONICS S.R.L. (2)
6,816,404 Architecture of a phase-change nonvolatile memory array 29 2002
8,377,741 Self-heating phase change memory cell architecture 0 2008
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
7,705,424 Phase change memory 3 2007
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XENOGENIC DEVELOPMENT LIMITED LIABILITY COMPANY (2)
6,868,025 Temperature compensated RRAM circuit 17 2003
7,027,342 Semiconductor memory device 18 2005
 
ADESTO TECHNOLOGY CORPORATION (1)
7,746,683 NOR and NAND memory arrangement of resistive memory elements 1 2007
 
HIGGS OPL. CAPITAL LLC (1)
7,933,147 Sensing circuit of a phase change memory and sensing method thereof 0 2007
 
INTELLECTUAL PROPERTIES I KFT. (1)
6,998,698 Memory cell with a perovskite structure varistor 12 2003
 
KABUSHIKI KAISHA TOSHIBA (1)
8,259,489 Nonvolatile semiconductor memory device generating different write pulses to vary resistances 0 2008
 
NANYA TECHNOLOGY CORPORATION (1)
8,045,367 Phase change memory 0 2008
 
RENESAS ELECTRONICS CORPORATION (1)
7,208,751 Non-volatile semiconductor memory device allowing shrinking of memory cell 111 2003
 
RIKEN (1)
7,875,883 Electric device using solid electrolyte 0 2002
 
SEAGATE TECHNOLOGY LLC (1)
8,203,862 Voltage reference generation with selectable dummy regions 4 2009
 
SILICON STORAGE TECHNOLOGY, INC. (1)
6,937,507 Memory device and method of operating same 207 2003
 
SONY CORPORATION (1)
7,227,523 Liquid crystal display device and inspecting method thereof 1 2004

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