In-situ fluid jet orifice
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United States of America Patent
Stats
-
Nov 13, 2001
Grant Date -
Aug 23, 2001
app pub date -
Dec 13, 2000
filing date -
Mar 2, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process for creating and an apparatus employing reentrant (pointing or directed inward) shaped orifices in a semiconductor substrate. A layer of graded dielectric material is deposited on the semiconductor substrate. A masked photoimagable material is deposited upon the graded dielectric material and exposed to electromagnetic energy such that a patterned photoimagable material is created. The patterned photoimagable material is developed to unveil the graded dielectric material which is then anisotropically etched. The bore in the graded dielectric material is then isotropically etched to complete the creation of holes in the substrate.
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