Methods for reducing a dielectric constant of a dielectric film and for forming a low dielectric constant porous film
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United States of America Patent
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Nov 20, 2001
Grant Date -
N/A
app pub date -
Jul 11, 2000
filing date -
Jul 11, 2000
priority date (Note) -
Expired
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Abstract
Disclosed is a non-solvent method for reducing a dielectric constant of a dielectric film. The dielectric film, which can be formed on a substrate by a spin-on coating or a chemical vapor deposition (CVD), is placed in an atmosphere of an inert gas at a high pressure or in a supercritical fluid state, and then the pressure of the atmosphere is rapidly released to form nanopores on the surface of the dielectric film, whereby the dielectric constant thereof is reduced.
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