Importance

Loading Importance Indicators...

Abstract

An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate which includes a dielectric layer formed between a first structure and a second structure, the method comprising the steps of: growing an oxide-containing layer (layer 204 of FIGS. 2a-2d) on the first structure (substrate 202 of FIGS. 2a-2d); forming a silicon-containing layer (layer 206 of FIG. 2b) on the oxide-containing layer; oxidizing substantially all of the silicon-containing layer by subjecting it to an ambient comprised of oxygen and nitrogen with a substrate temperature around 700 to 800 C.; and forming the second structure (layer 214 of FIG. 2d) on the oxidized silicon-containing layer. Preferably, the step of oxidizing substantially all of the silicon-containing layer is performed by subjecting the silicon-containing layer to an ambient containing: N.sub.2 O with a wafer temperature around 700 to 800 C.; or NO with a wafer temperature around 700 to 800 C. The nitrogen is, preferably, incorporated between the oxide-containing layer and the first structure and/or between the oxide-containing layer and the oxidized silicon-containing layer.

Loading the Abstract Image...

First Claim