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Abstract

The invention encompasses methods of forming capacitors, methods of forming silicon nitride layers on silicon-comprising substrates, methods for densifying silicon nitride layers, methods for forming capacitors, and capacitors. In one aspect, the invention includes a method of densifying a silicon nitride layer comprising subjecting a silicon nitride layer to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure. In another aspect, the invention includes a method of forming a capacitor comprising: a) forming a first capacitor plate, the first capacitor plate comprising silicon and having a surface; b) forming a dielectric layer proximate the first capacitor plate, the dielectric layer comprising a silicon nitride layer and being formed by exposing the first capacitor plate surface to a nitrogen-comprising ambient atmosphere having at least about two atmospheres of pressure; and c) forming a second capacitor plate proximate the dielectric layer. In another aspect, the invention includes a capacitor comprising: a) a first conductive capacitor plate and a second conductive capacitor plate; and b) capacitor dielectric material intermediate the first and second capacitor plates, all of the dielectric material intermediate the first and second capacitor plates consisting essentially of a single oxide layer and a single nitride layer.

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First Claim