Structures including low carbon/oxygen conductive layers
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United States of America Patent
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Nov 27, 2001
Issued Date -
N/A
app pub date -
Aug 24, 1999
filing date -
Sep 3, 1998
priority date (Note) -
Expired
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Abstract
The present invention provides a method for forming a substantially carbon-and oxygen-free conductive layer, wherein the layer can contain a metal and/or a metalloid material. According to the present invention, a substantially carbon- and oxygen-free conductive layer is formed in an oxidizing atmosphere in the presence of an organometallic catalyst using, for example, a chemical vapor deposition process. Such layers are particularly advantageous for use in memory devices, such as dynamic random access memory (DRAM) devices.
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