US Patent No: 6,326,230
Number of patents in Portfolio can not be more than 2000
High speed CMOS imager with motion artifact supression and anti-blooming
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Dec 4, 2001
Issued date -
Jan 5, 2000
filing date -
09/479,379
serial no -
In Force
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Abstract
An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 5,471,515 Active pixel sensor with intra-pixel charge transfer | 550 | 1994 | |
| 5,909,026 Integrated sensor with frame memory and programmable resolution for light adaptive imaging | 84 | 1997 | |
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| 5,835,141 Single-polysilicon CMOS active pixel image sensor | 52 | 1996 | |
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| 6,147,846 Drive circuit with over-voltage protection for use with pixel cells and other circuits | 16 | 1998 | |
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| 5,854,100 Method of forming a new bipolar/CMOS pixel for high resolution imagers | 25 | 1997 | |
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| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jun 4, 2013 |
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