Method of producing a laser trimmable thin film resistor in an integrated circuit
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 4, 2001
Grant Date -
N/A
app pub date -
Sep 27, 1999
filing date -
Dec 18, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A thin film resistor processing flow solves the problem of accurately incorporating the resistor (80) to be trimmed in an optimized multilayer stack (60,70). This is achieved by measuring the total thickness of the dielectric stack (60) between the silicon substrate and the top of the dielectric stack just prior to the formation of the thin film resistor (80). Then, the thickness of the dielectric stack (60) is adjusted (60+70) to be an odd integer number of laser quarter wavelengths. The thin film resistor (60) is then formed and overlying dielectric (120) is deposited. The thickness of the overlying dielectric (120) may likewise be adjusted (120+130) to be an odd integer number of laser quarter wavelengths.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully