Pin photodiode having a wide bandwidth
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United States of America Patent
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Dec 4, 2001
Grant Date -
N/A
app pub date -
Jan 13, 1999
filing date -
Jan 13, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region and the i region which substantially decreases the capacitance of the PIN photodiode such that the photodiode bandwidth is maximized. Typically, the buffer region is formed as a layer of indium phosphide that is at least approximately 0.5 .mu.m in thickness.
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