Microwave voltage controlled oscillator formed and located on a high dielectric loss substrate with a controlled circuit
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United States of America Patent
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-
Dec 4, 2001
Grant Date -
N/A
app pub date -
Feb 10, 2000
filing date -
Jun 27, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A voltage controlled oscillator formed as a first layout with metallized areas by a planar technique is located on a high dielectric loss substrate. A second layout formed of metallized area for control circuits of the voltage controlled oscillator is formed on a high loss dielectric substrate is also formed by the same technique as the first layout. A ground plane for the controlling oscillator is formed on an opposite side of the dielectric substrate on which the voltage controlled oscillator is formed.
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