Process for joining inorganic substrates in a permanent manner
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United States of America Patent
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Dec 11, 2001
Grant Date -
N/A
app pub date -
Nov 5, 1999
filing date -
Sep 26, 1996
priority date (Note) -
Expired
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Abstract
In a method of connecting a first and a second silicon wafer, the first silicon wafer is first provided with a polyimide layer on a main surface thereof. Subsequently, a plasma-induced reaction between the polyimide layer and water is performed. A plasma-induced reaction is also performed between a main surface of the second silicon wafer and chlorine. The main surface of the second silicon wafer is then subjected to a treatment with hydrolyzed triethoxysilylpropanamine. Following this, the surfaces of the two silicon wafers, which have been subjected to the plasma-induced reactions, are joined together so as connect the silicon wafers permanently.
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