Analog-to-digital converter and method of fabrication

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United States of America Patent

PATENT NO 6329260
SERIAL NO

09394802

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An integrated circuit has an isolation structure in the form of a double diode moat. The P substrate has P+ buried layers 8601 and 8602 on opposite sides of N+ buried layer 8605. Analog devices are formed behind one diode moat, digital CMOS devices are formed behind the other moat.

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Patent Owner(s)

  • INTERSIL AMERICAS INC.;INTERSIL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bacrania, Kantilal Palm Bay, FL 24 575
Church, Michael D Sebastian, FL 35 276
DeJong, Glenn Alan Merritt Island, FL 3 71
Ito, Akira Palm Bay, FL 503 5429
Johnston, Jeffrey Indian Harbour Beach, FL 21 92
Rhee, Choong-Sun Palm Bay, FL 4 97

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