Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
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United States of America Patent
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Dec 11, 2001
Grant Date -
N/A
app pub date -
Jun 14, 1999
filing date -
Jun 14, 1999
priority date (Note) -
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Abstract
The invention relates to a method of iteratively, selectively tuning the impedance of integrated semiconductor devices, by modifying the dopant profile of a region of low dopant concentration by controlled diffusion of dopants from one or more adjacent regions of higher dopant concentration through the melting action of a focussed heating source, for example a laser. In particular the method is directed to increasing the dopant concentration of the region of lower dopant concentration, but may also be adapted to decrease the dopant concentration of the region.
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