Methods for forming conformal iridium layers on substrates
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United States of America Patent
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Dec 11, 2001
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N/A
app pub date -
Apr 27, 1999
filing date -
Apr 27, 1999
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Expired
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Abstract
A method of forming a generally conformal iridium layer (preferably, an iridium metal layer optionally containing oxides of iridium) on a substrate, such as a semiconductor wafer, using complexes of the formula CpIr(CO).sub.2 wherein Cp is a substituted or unsubstituted cyclopentadienyl ligand; and forming a generally conformal iridium layer on a surface of the substrate, wherein the layer is formed from the precursor composition in the presence of one or more carrier gases and one or more oxidizing gases.
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