Method and apparatus for reducing standby leakage current using a leakage control transistor that receives boosted gate drive during an active mode

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United States of America

PATENT NO 6329874
SERIAL NO

09151827

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Abstract

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Standby leakage reduction circuitry that uses boosted gate drive of a leakage control transistor during an active mode. A circuit block includes a first leakage control transistor coupled to receive a first supply voltage and coupled in series with an internal circuit block that performs a particular function. A gate drive circuit is included to apply a first boosted gate drive voltage to a gate of the first leakage control transistor during an active mode of the internal circuit block. The gate drive circuit furthers applies a standby gate voltage to the gate during a standby mode of the internal circuit block, the standby gate voltage to cause a gate to source voltage of the leakage control transistor to be reverse-biased.

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Patent Owner(s)

Patent OwnerAddress
SONY CORPORATION OF AMERICA25 MADISON AVENUE NEW YORK NY 10010

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
De, Vivek K Beaverton, OR 212 4611
Ye, Yibin Portland, OR 93 2344

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