Virtual channel synchronous dynamic random access memory
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United States of America Patent
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-
Dec 11, 2001
Grant Date -
Sep 20, 2001
app pub date -
Dec 21, 2000
filing date -
Dec 22, 1999
priority date (Note) -
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Abstract
The present invention provides a semiconductor memory device comprising: memory cells; main decoders decoding address signals sense amplifiers for reading out informations from the memory cells; and word drivers for driving the memory cells, wherein a row address controlled by a single main word line in a basic cell in the word driver, and two of the main word line of the row address are made correspond to a half of lower-order 2-bits of the row address, and a word driver signal is placed inside of the basic cell of the word driver to prevent the word driver signal from being commonly used to adjacent two of the basic cell.
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