Methods of forming a local interconnect method of fabricating integrated circuitry comprising an SRAM cell having a local interconnect and having circuitry peripheral to the SRAM cell and method of forming contact plugs
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United States of America Patent
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Dec 25, 2001
Grant Date -
N/A
app pub date -
Dec 14, 2000
filing date -
Dec 14, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In one implementation, a substrate is provided which has at least two nodes to be electrically connected. A first conductivity type semiconductive material is formed over and in electrical connection with one of the nodes. A conductive diffusion barrier material is formed over and in electrical connection with the first conductivity type semiconductive material. A second conductivity type semiconductive material is formed over and in electrical connection with the first conductivity type semiconductive material through the conductive diffusion barrier material, and over and in electrical connection with another of the nodes. The first conductivity type semiconductive material, the conductive diffusion barrier material and the second conductivity type semiconductive material are formed into a local interconnect electrically connecting the one node and the another node. Local interconnects fabricated by this and other methods are also contemplated. The invention includes in one implementation a method of forming contact plugs.
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