Capacitor with noble metal electrode containing oxygen
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United States of America Patent
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Dec 25, 2001
Grant Date -
N/A
app pub date -
Feb 26, 1999
filing date -
Feb 27, 1998
priority date (Note) -
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Abstract
The present invention relates to a method of manufacturing a semiconductor device including steps of fabricating a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, a dielectric oxide film formed on the lower electrode, and an upper electrode formed the dielectric oxide film and formed of at least platinum in which oxygen is contained at a concentration of more than 1.times.10.sup.20 atoms/cm.sup.3. Accordingly, peeling of the upper electrode can be prevented and electric characteristics of the capacitor can be improved.
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