US Patent No: 6,333,556

Number of patents in Portfolio can not be more than 2000

Insulating materials

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Abstract

The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
MICRON TECHNOLOGY, INC.BOISE, ID18599

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blalock, Guy Boise, ID 65 1319
Iyer, Ravi Boise, ID 148 1519
Juengling, Werner Boise, ID 230 1728
Prall, Kirk D Boise, ID 123 1243
Sandhu, Gurtej S Boise, ID 1115 16695

Cited Art

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (7)
5,496,773 Semiconductor processing method of providing an electrically conductive interconnecting plug between an elevationally inner electrically conductive node and an elevationally outer electrically conductive node 34 1995
5,599,745 Method to provide a void between adjacent conducting lines in a semiconductor device 52 1995
5,773,363 Semiconductor processing method of making electrical contact to a node 38 1996
5,691,565 Integrated circuitry having a pair of adjacent conductive lines 25 1996
5,882,978 Methods of forming a silicon nitride film, a capacitor dielectric layer and a capacitor 68 1997
6,251,470 Methods of forming insulating materials, and methods of forming insulating materials around a conductive component 27 1997
6,156,374 Method of forming insulating material between components of an integrated circuit 18 1999
 
TEXAS INSTRUMENTS INCORPORATED (7)
5,488,015 Method of making an interconnect structure with an integrated low density dielectric 105 1994
5,461,003 Multilevel interconnect structure with air gaps formed between metal leads 210 1994
5,527,737 Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction 36 1994
5,525,857 Low density, high porosity material as gate dielectric for field emission device 51 1994
5,804,508 Method of making a low dielectric constant material for electronics 38 1996
5,736,425 Glycol-based method for forming a thin-film nanoporous dielectric 65 1996
5,807,607 Polyol-based method for forming thin film aerogels on semiconductor substrates 65 1996
 
LSI LOGIC CORPORATION (3)
5,470,801 Low dielectric constant insulation layer for integrated circuit structure and method of making same 136 1993
5,744,399 Process for forming low dielectric constant layers using fullerenes 75 1995
6,028,015 Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption 99 1999
 
ADVANCED MICRO DEVICES, INC. (2)
5,670,828 Tunneling technology for reducing intra-conductive layer capacitance 57 1995
5,691,573 Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines 36 1995
 
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (2)
5,286,668 Process of fabricating a high capacitance storage node 46 1993
5,950,102 Method for fabricating air-insulated multilevel metal interconnections for integrated circuits 51 1997
 
ENERGY, UNITED STATES DEPARTMENT OF (1)
5,023,200 Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies 41 1988
 
LUCENT TECHNOLOGIES INC. (1)
5,583,078 Method for fabricating a planar dielectric 18 1995
 
NEC CORPORATION (1)
5,141,896 Process for the production of crossing points for interconnections of semiconductor devices 31 1991
 
NEC ELECTRONICS CORPORATION (1)
5,103,288 Semiconductor device having multilayered wiring structure with a small parasitic capacitance 140 1991
 
NXP B.V. (1)
6,001,747 Process to improve adhesion of cap layers in integrated circuits 54 1998
 
SAMSUNG ELECTRONICS CO., LTD. (1)
5,629,238 Method for forming conductive line of semiconductor device 21 1995
 
SUMITOMO ELECTRIC INDUSTRIES, LTD. (1)
5,192,834 Insulated electric wire 32 1991
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
5,554,567 Method for improving adhesion to a spin-on-glass 49 1994
 
U.S. PHILIPS CORPORATION (1)
4,561,173 Method of manufacturing a wiring system 59 1983
 
UNITED MICROELECTRONICS CORP. (1)
5,883,014 Method for treating via sidewalls with hydrogen plasma 45 1997
 
OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (2)
5,171,713 Process for forming planarized, air-bridge interconnects on a semiconductor substrate 76 1991
5,861,345 In-situ pre-PECVD oxide deposition process for treating SOG 32 1997

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
QUALCOMM MEMS TECHNOLOGIES, INC. (24)
7,550,794 Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer 20 2002
7,373,026 MEMS device fabricated on a pre-patterned substrate 12 2005
7,567,373 System and method for micro-electromechanical operation of an interferometric modulator 19 2005
7,795,061 Method of creating MEMS device cavities by a non-etching process 1 2005
7,450,295 Methods for producing MEMS with protective coatings using multi-component sacrificial layers 40 2006
7,643,203 Interferometric optical display system with broadband characteristics 17 2006
7,566,664 Selective etching of MEMS using gaseous halides and reactive co-etchants 24 2006
7,660,058 Methods for etching layers within a MEMS device to achieve a tapered edge 3 2006
7,580,172 MEMS device and interconnects for same 4 2006
7,355,782 Systems and methods of controlling micro-electromechanical devices 6 2006
7,535,621 Aluminum fluoride films for microelectromechanical system applications 23 2006
7,652,814 MEMS device with integrated optical element 3 2007
7,733,552 MEMS cavity-coating layers and methods 3 2007
7,570,415 MEMS device and interconnects for same 1 2007
7,719,752 MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same 2 2007
7,564,613 Microelectromechanical device and method utilizing a porous surface 2 2007
7,532,386 Process for modifying offset voltage characteristics of an interferometric modulator 6 2007
7,660,031 Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator 2 2008
7,688,494 Electrode and interconnect materials for MEMS devices 10 2008
7,830,589 Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator 0 2009
8,077,379 Interferometric optical display system with broadband characteristics 0 2009
8,126,297 MEMS device fabricated on a pre-patterned substrate 0 2010
8,164,815 MEMS cavity-coating layers and methods 0 2010
8,394,656 Method of creating MEMS device cavities by a non-etching process 0 2010
 
MICRON TECHNOLOGY, INC. (22)
7,276,788 Hydrophobic foamed insulators for high density circuits 3 1999
6,890,847 Polynorbornene foam insulation for integrated circuits 8 2000
6,667,219 Methods for forming void regions, dielectric regions and capacitor constructions 4 2000
6,501,179 Constructions comprising insulative materials 7 2001
6,844,255 Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry 3 2001
6,677,209 Low dielectric constant STI with SOI devices 9 2002
6,781,192 Low dielectric constant shallow trench isolation 15 2002
6,770,537 Low dielectric constant shallow trench isolation 4 2002
6,756,653 Low dielectric constant shallow trench isolation 4 2002
6,737,723 Low dielectric constant shallow trench isolation 7 2002
7,153,754 Methods for forming porous insulators from "void" creating materials and structures and semiconductor devices including same 1 2002
7,112,542 Methods of forming materials between conductive electrical components, and insulating materials 9 2002
6,780,721 Low dielectric constant shallow trench isolation 5 2003
6,953,983 Low dielectric constant STI with SOI devices 3 2003
6,902,984 Methods of forming void regions, dielectric regions and capacitor constructions 0 2004
7,554,200 Semiconductor devices including porous insulators 0 2004
7,335,965 Packaging of electronic chips with air-bridge structures 2 2004
7,285,502 Methods for forming porous insulator structures on semiconductor devices 0 2004
7,262,487 Semiconductor devices and other electronic components including porous insulators created from "void" creating materials 1 2004
7,262,503 Semiconductor constructions 2 2004
7,405,454 Electronic apparatus with deposited dielectric layers 28 2005
7,387,912 Packaging of electronic chips with air-bridge structures 1 2005
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
6,737,725 Multilevel interconnect structure containing air gaps and method for making 27 2002
 
RENESAS ELECTRONICS CORPORATION (1)
6,835,647 Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method 0 2003

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