Simplified method of patterning field dielectric regions in a semiconductor device
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United States of America Patent
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Jan 1, 2002
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app pub date -
Aug 17, 1999
filing date -
Aug 17, 1999
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Abstract
Isolation regions are formed with greater accuracy and consistency by forming an oxide-silicon nitride stack and then depositing an amorphous silicon antireflective layer, on the silicon nitride layer before patterning. Embodiments also include depositing the silicon nitride layer and the amorphous silicon layer in the same tool.
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