Method of producing crystalline semiconductor
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United States of America Patent
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Jan 8, 2002
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N/A
app pub date -
Aug 5, 1996
filing date -
Jun 7, 1995
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Abstract
A method of producing a crystalline silicon film having superior crystalline properties is characterized by a method of adding catalytic metal for accelerating crystallization of the amorphous silicon film. The catalytic element is adsorbed on the surface of the amorphous silicon film by using a vapor or a gas, so that a low temperature short time crystallization is made possible by using the catalytic metal at heat crystallization. Especially, by controlling partial pressures, when adsorption state is made into monomolecular layer adsorption with covering rate 1, superior uniform crystalline silicon film can be obtained.
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