Graded composition diffusion barriers for chip wiring applications
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United States of America Patent
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Jan 8, 2002
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N/A
app pub date -
Aug 18, 1999
filing date -
Aug 18, 1999
priority date (Note) -
Expired
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Abstract
A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film.
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