Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method
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United States of America Patent
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Jan 8, 2002
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app pub date -
May 10, 2000
filing date -
Nov 10, 1997
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Abstract
In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550.degree. C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.
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